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Influence of SiO2 Capping and Annealing on the Luminescence Properties of Larva-Like GaS Nanostructures
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  • Influence of SiO2 Capping and Annealing on the Luminescence Properties of Larva-Like GaS Nanostructures
  • Influence of SiO2 Capping and Annealing on the Luminescence Properties of Larva-Like GaS Nanostructures
저자명
Kim. Hyunsu,Jin. Changhyun,Park. Sunghoon,Lee. Chongmu
간행물명
Bulletin of the Korean Chemical Society
권/호정보
2012년|33권 11호|pp.3576-3580 (5 pages)
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대한화학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

Larva-like GaS nanostructures synthesized by the thermal evaporation of Ga metals and S powders were coated with $SiO_2$ by the sputtering technique. Transmission electron microscopy and X-ray diffraction analyses revealed that the cores and shells of the GaS-core/$SiO_2$-shell larva-like nanostructures were single crystal wurtzite-type hexagonal structured-GaS and amorphous $SiO_2$, respectively. Photoluminescence (PL) measurements at room temperature showed that the passivation of the larva-like GaS nanostructures was successfully achieved with $SiO_2$ without nearly harming the major emission from the wires. However, subsequent thermal annealing treatment was found to be undesirable owing to the degradation of their emission in intensity.