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Advanced Circuit-Level Model of Magnetic Tunnel Junction-based Spin-Torque Oscillator with Perpendicular Anisotropy Field
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  • Advanced Circuit-Level Model of Magnetic Tunnel Junction-based Spin-Torque Oscillator with Perpendicular Anisotropy Field
  • Advanced Circuit-Level Model of Magnetic Tunnel Junction-based Spin-Torque Oscillator with Perpendicular Anisotropy Field
저자명
Kim. Miryeon,Lim. Hyein,Ahn. Sora,Lee. Seungjun,Shin. Hyungsoon
간행물명
Journal of semiconductor technology and science
권/호정보
2013년|13권 6호|pp.556-561 (6 pages)
발행정보
대한전자공학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

Interest in spin-torque oscillators (STOs) has been increasing due to their potential use in communication devices. In particular the magnetic tunnel junction-based STO (MTJ-STO) with high perpendicular anisotropy is gaining attention since it can generate high output power. In this paper, a circuit-level model for an in-plane magnetized MTJ-STO with partial perpendicular anisotropy is proposed. The model includes the perpendicular torque and the shift field for more accurate modeling. The bias voltage dependence of perpendicular torque is represented as quadratic. The model is written in Verilog-A, and simulated using HSPICE simulator with a current-mirror circuit and a multi-stage wideband amplifier. The simulation results show the proposed model can accurately replicate the experimental data such that the power increases and the frequency decreases as the value of the perpendicular anisotropy gets close to the value of the demagnetizing field.