In this paper, we developed a beam of MEMS probe card using a BeCu sheet. Silicon wafer thickness of $400{mu}m$ was fabricated by using deep reactive ion etching (RIE) process. After forming through silicon via (TSV), the silicon wafer was bonded with BeCu sheet by soldering process. We made BeCu beam stress-free owing to removing internal stress by using joule heating. BeCu beam was fused by using joule heating caused by high current. The fabricated BeCu beam measured length of 1.75 mm and width of 0.44 mm, and thickness of $15{mu}m$. We measured fusing current as a function of the cutting planes. Maximum current was 5.98 A at cutting plane of $150{mu}m^2$. The proposed low-cost and simple fabrication process is applicable for producing MEMS probe beam.