Silicon carbide with aluminium oxide was used to remove the sulphur hexafluoride ($SF_6$) gas using microwave irradiation. The destruction and removal efficiencies (DREs) of $SF_6$ were studies as a function of various decomposition temperatures and microwave powers. The decomposition of $SF_6$ gas was analyzed using GC-TCD. XRD (X-ray powder diffraction) and XRF (X-ray Fluorescence Spectrometer) were used to characterize the properties of aluminum oxide. DREs of $SF_6$ were increased as the microwave powers were increased. Additive aluminium oxide on SiC increased the removal efficiencies and decreased the decomposition temperature. The XRD results show that the ${gamma}-Al_2O_3$ was transformed to ${alpha}-Al_2O_3$ during $SF_6$ decomposition by microwave irradiation. It was found that the best material to control $SF_6$ was SiC with $Al_2O_3$ 30 wt% in consideration of microwave energy consumption and $SF_6$ decomposition rate.