As CMOS technology is scaled down more aggressively, the reliability mechanism (or aging effect) caused by the diffusion of metal atoms along the conductor in the direction of the electron flow, also called electromigration (EM), has become a major reliability concern. With the present of EM, it is difficult to control the current flows of the MOSFET device and interconnect. In addition, nanoscale CMOS circuits suffer from increased gate leakage current and power consumption. In this paper, the EM effects on current of the nanoscale CMOS circuits are analyzed. Finally, this paper introduces an on-chip current measurement method providing lifetime electromigration management which are designed using 45-nm CMOS predictive technology model.