Package on Package(PoP)용 하부 패키지에 대해 플립칩 본딩으로 칩을 기판에 실장한 패키지와 die attach film(DAF)을 사용하여 칩을 기판에 접착한 패키지의 warpage 특성을 비교하였다. 플립칩 본딩으로 칩을 기판에 실장한 패키지와 DAF를 사용하여 칩을 기판에 실장한 패키지는 솔더 리플로우 온도인 $260^{circ}C$에서 각기 $57{mu}m$와 $-102{mu}m$의 warpage를 나타내었다. 상온에서 $260^{circ}C$ 사이의 온도 범위에서 플립칩 실장한 패키지는 $-27{sim}60{mu}m$ 범위의 warpage를 나타내는 반면에, DAF 실장한 패키지는 $-50{sim}-153{mu}m$ 범위의 warpage를 나타내었다.
The warpage of a bottom package of Package on Package(PoP) where a chip was mounted to a substrate by flip chip process was compared to that of a bottom package for which a chip was bonded to a substrate using die attach film(DAF). At the solder reflow temperature of $260^{circ}C$, the packages processed with flip chip bonding and DAF bonding exhibited warpages of $57{mu}m$ and $-102{mu}m$, respectively. At the temperature range between room temperature and $260^{circ}C$, the packages processed with flip chip bonding and DAF bonding exhibited warpage values ranging from $-27{mu}m$ to $60{mu}m$ and from $-50{mu}m$ to $-15{mu}m$, respectively.
