Cu(In,Ga)$Se_2$ (CIGS) thin films were annealed on molybdenium/sodalime glass substrates of $300{ imes}300mm^2$ by rapid thermal processing (RTP) with 2-step rising-temperature times in $N_2$ ambient. Morphological property, structural characteristics and chemical composition of the precursor of CIGS thin films were influenced directly with a change of $1^{st}$-step rising-temperature time in RTP whereas there is no significant difference with the different $2^{nd}$-step rising-temperature time (final crystallization temperature). The shorter $1^{st}$-step rising-temperature time in RTP obtained the higher photovoltaic cell efficiency from 7.469% to 8.479% even though the ideal composition in CIGS thin films could not be accoplished in this study.