$Bi_{3.25}La_{0.75}Ti_3O_{12}$(BLT) thin films were prepared on the Pt(150 nm)/Ti(50 nm)/$SiO_2$/Si substrate using the rf magnetron sputtering method. The BLT thin films were annealed at temperatures ranging from $600^{circ}C$ to $750^{circ}C$ using the rapid thermal annealing. The structure and surface morphology of the thin films were characterized by x-ray diffraction and field emission scanning electron microscopy. The hysteresis loop of the BLT thin films showed that the remanent polarization (2Pr) of the film annealed at $700^{circ}C$ was 10.92 ${mu}C/cm^2$. The fatigue characteristic of the BLT thin film annealed at $700^{circ}C$ was shown change polarization up to $1.2{ imes}10^9$ switching cycles. We confirmed the excellent remnant polarization (Pr) and fatigue properties compared with other fabrication methods and suggested a good method for BLT thin films fabrications.