- 기판 각도에 따른 탄소나노월의 성장 특성
- ㆍ 저자명
- 김성윤,정연호,한재찬,최원석,Kim. Sung Yun,Joung. Yeun-Ho,Han. Jae Chan,Choi. Won Seok
- ㆍ 간행물명
- 전기전자재료학회논문지
- ㆍ 권/호정보
- 2013년|26권 9호|pp.686-689 (4 pages)
- ㆍ 발행정보
- 한국전기전자재료학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
The carbon nanowall (CNW) is a carbon-based nanomaterials and it was constructed with vertical structure graphenes and it has the highest surface density among carbon-based nanostructures. In this study, we have checked the growth properties of CNW according to the substrate angle. Microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow CNW on Si substrate with methane ($CH_4$) and hydrogen ($H_2$) gases. And, we have changed the substrate angle from $0^{circ}$ to $90^{circ}$ in steps of $30^{circ}$. The planar and vertical conditions of the grown CNWs according to the substrate angle were characterized by a field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). In case of the growth angle increases, our experimental results showed that the length of the CNW was shortened and the content of carbon component was decreased.