We have studied Hall effect for potassium (K)-doped $BaFe_2As_2$ superconducting thin films by analyzing the relation between the longitudinal resistivity (${ ho}_{xx}$) and the Hall resistivity (${ ho}_{xy}$). The thin films used in this study were fabricated on $Al_2O_3$ (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ~$10^{-6}$ Torr. The samples showed the high superconducting transition temperatures ($T_c$) of ~ 40 K. The ${ ho}_{xx}$ and the ${ ho}_{xy}$ for K-doped $BaFe_2As_2$ thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of $100A/cm^2$ and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ${ ho}_{xx}$and the ${ ho}_{xy}$ to investigate Hall scaling behavior on the basis of the relation of ${ ho}_{xy}={A{ ho}_{xx}}^{eta}$. The ${eta}$ values are $3.0{pm}0.2$ in the c-axis-oriented K-doped $BaFe_2As_2$ thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower ${eta}$ than that of c-axis-oriented thin films. Interestingly, the ${eta}$ value is decreased with increasing magnetic fields.