We investigate the characteristics of $Cu_2O$ thin films deposited through the addition of $N_2$ gas. The addition of $N_2$ gas has remarkable effects on the phase changes, resulting in improved electrical and optical properties. An intermediate phase ($6CuO{cdot}Cu_2O$) appears at a $N_2$ flow rate of 1 sccm, and a $Cu_2O$ (200) phase is then preferentially grown at a higher feeding amount of $N_2$. The optical and electrical properties of $Cu_2O$ thin films are improved with a sufficient $N_2$ flow rate of more than 15 sccm, as confirmed through various analyses. Under this condition, a high bandgap energy of 2.58 eV and a conductivity of $1.5{ imes}10^{-2}$ S/cm are obtained. These high-quality $Cu_2O$ thin films are expected to be applied to $Cu_2O$-based heterojunction solar cells and optical functional films.