Silicon carbide(SiC) layer is particularly important tri-isotropic (TRISO) coating layers because it acts as a miniature pressure vessel and a diffusion barrier to gaseous and metallic fission products in the TRISO coated particle. The high temperature deposition of SiC layer normally performed at $1500-1650^{circ}C$ has a negative effect on the property of IPyC layer by increasing its anisotropy. To investigate the feasibility of lower temperature SiC deposition, the influence of deposition temperature on the property of SiC layer are examined in this study. While the SiC layer coated at $1500^{circ}C$ obtains nearly stoichiometric composition, the composition of the SiC layer coated at $1300-1400^{circ}C$ shows discrepancy from stoichiometric ratio(1:1). $3-7{mu}m$ grain size of SiC layer coated at $1500^{circ}C$ is decreased to sub-micrometer (< $1{mu}m$) $-2{mu}m$ grain size when coated at $1400^{circ}C$, and further decreased to nano grain size when coated at $1300-1350^{circ}C$. Moreover, the high density of SiC layer (${geq}3.19g/cm^3$) which is easily obtained at $1500^{circ}C$ coating is difficult to achieve at lower temperature owing to nano size pores. the density is remarkably decreased with decreasing SiC deposition temperature.