We fabricated undoped and Sb-doped $SnO_2$ thin films on glass substrates by a pulsed laser deposition (PLD) process. Undoped and 2 - 8 wt% $Sb_2O_3$-doped $SnO_2$ targets with a high density level of ~90% were prepared by the spark plasma sintering (SPS) process. Initially, the effects of the deposition temperature on undoped $SnO_2$ thin films were investigated in the region of $100-600^{circ}C$. While the undoped $SnO_2$ film exhibited the lowest resistivity of $1.20{ imes}10^{-2}{Omega}{cdot}cm$ at $200^{circ}C$ due to the highest carrier concentration generated by the oxygen vacancies, 2 wt% Sb-doped $SnO_2$ film exhibited the lowest resistivity value of $5.43{ imes}10^{-3}{Omega}{cdot}cm$, the highest average transmittance of 85.8%, and the highest figure of merit of 1202 ${Omega}^{-1}{cdot}cm^{-1}$ at $400^{circ}C$ among all of the doped films. These results imply that 2 wt% $Sb_2O_3$ is an optimum doping content close to the solubility limit of $Sb^{5+}$ substitution for the $Sb^{4+}$ sites of $SnO_2$.