The Sr based ceramic thin films were deposited on Si substrate by RF magnetron sputtering method. And Sr based thin films were annealed at $500{sim}700^{circ}C$ using RTA. The surface roughness showed about 2.4 nm in annealed thin film at $600^{circ}C$. The capacitance density of Sr based thin films were increased with the increase of annealing temperature. The maximum capacitance density of $0.6{mu}F/cm^2$ was obtained by annealing temperature at $700^{circ}C$. The voltage dependence of dielectric loss showed about 0.02 in voltage ranges of -10~+10 V. The leakage current density of annealing temperature of $600^{circ}C$ was the $4.0{ imes}10^{-6};A/cm^2$ at applied voltage of -5~+5 V.