In this paper, an extended switched-inductor quasi-Z-source inverter (ESL-qZSI) with high boost voltage inversion ability is presented, which combines the SL-qZSI with the traditional boost converter, as well as improves the switched-inductor cell. Compared with the classic qZSI topologies, the proposed topology reduces the voltage stresses of capacitors, power devices and diodes for the same input and output voltage. Furthermore, the conversion efficiency is improved. The operation principle of the proposed topology is analyzed in details, which is followed by the comparison between the three topologies. In addition, the performance of the proposed topology is verified by simulations and experiments.