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A CMOS Envelope Tracking Power Amplifier for LTE Mobile Applications
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  • A CMOS Envelope Tracking Power Amplifier for LTE Mobile Applications
  • A CMOS Envelope Tracking Power Amplifier for LTE Mobile Applications
저자명
Ham. Junghyun,Jung. Haeryun,Kim. Hyungchul,Lim. Wonseob,Heo. Deukhyoun,Yang. Youngoo
간행물명
Journal of semiconductor technology and science
권/호정보
2014년|14권 2호|pp.235-245 (11 pages)
발행정보
대한전자공학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

This paper presents an envelope tracking power amplifier using a standard CMOS process for the 3GPP long-term evolution transmitters. An efficiency of the CMOS power amplifier for the modulated signals can be improved using a highly efficient and wideband CMOS bias modulator. The CMOS PA is based on a two-stage differential common-source structure for high gain and large voltage swing. The bias modulator is based on a hybrid buck converter which consists of a linear stage and a switching stage. The dynamic load condition according to the envelope signal level is taken into account for the bias modulator design. By applying the bias modulator to the power amplifier, an overall efficiency of 41.7 % was achieved at an output power of 24 dBm using the 16-QAM uplink LTE signal. It is 5.3 % points higher than that of the power amplifier alone at the same output power and linearity.