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서지반출
Molecular Dynamics Simulations of Kapitza Length for Argon-Silicon and Water-Silicon Interfaces
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  • Molecular Dynamics Simulations of Kapitza Length for Argon-Silicon and Water-Silicon Interfaces
  • Molecular Dynamics Simulations of Kapitza Length for Argon-Silicon and Water-Silicon Interfaces
저자명
Pham. An Truong,Barisik. Murat,Kim. Bohung
간행물명
International journal of precision engineering and manufacturing
권/호정보
2014년|15권 2호|pp.323-329 (7 pages)
발행정보
한국정밀공학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
서지반출

기타언어초록

A comprehensive understanding of heat conduction between two parallel solid walls separated by liquid remains incomplete in nanometer scale. In addition, the solid/liquid interfacial thermal resistance has been an important technical issue in thermal/fluid engineering such as micro electro-mechanical systems and nano electro-mechanical systems with liquid inside. Therefore, further advancements in nanoscale physics require an advanced understanding of momentum and energy transport at solid/liquid interfaces. This study employs three-dimensional molecular dynamics (MD) simulations to investigate the thermal resistance at solid/liquid interfaces. Heat conduction between two parallel silicon walls separated by a thin film of liquid water is considered. The density distribution of liquid water is discussed with the simulation results to further understanding of the dynamic properties of water near solid surfaces. Meanwhile, temperature profiles appear discontinuous between liquid and solid temperatures due to the dissimilarity of thermal transport properties of the two materials, which validates thermal resistance (or Kapitza length) at solid/liquid interfaces. MD results also investigate the temperature dependence of the Kapitza length, demonstrating that the Kaptiza lengths fluctuate around an average value and are independent of the wall temperature at solid/liquid interfaces. Our study provides useful information for the design of thermal management or heat dissipation devices across silicon/water and silicon/argon interfaces in nanoscale.