Planar electromagnetic interference (EMI) filters are widely used to restrain the conducted EMI of switching power supplies. Such filters are characterized by small size, low parasitic parameters, and better high-frequency performance than the passive discrete EMI filter. However, EMI filter performance cannot be exactly predicted by using existing methods. Therefore, this paper proposes a method to use scattering parameters (S-parameters) for the measurement of EMI filter performance. A planar EMI filter sample is established. From this sample, the relationship between S-parameters and insertion gain (IG) of EMI filter is derived. To determine the IG under different impedances, the EMI filter is theoretically calculated and practically measured. The differential structure of the near-field coupling model is also deduced, and the IG is calculated under standard impedance conditions. The calculated results and actual measurements are compared to verify the feasibility of the theory.