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EMI Prediction of Slew-Rate Controlled I/O Buffers by Full-Wave and Circuit Co-Simulation
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  • EMI Prediction of Slew-Rate Controlled I/O Buffers by Full-Wave and Circuit Co-Simulation
  • EMI Prediction of Slew-Rate Controlled I/O Buffers by Full-Wave and Circuit Co-Simulation
저자명
Kim. Namkyoung,Hwang. Jisoo,Kim. SoYoung
간행물명
Journal of semiconductor technology and science
권/호정보
2014년|14권 4호|pp.471-477 (7 pages)
발행정보
대한전자공학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

In this paper, a modeling and co-simulation methodology is proposed to predict the radiated electromagnetic interference (EMI) from on-chip switching I/O buffers. The output waveforms of I/O buffers are simulated including the on-chip I/O buffer circuit and the RC extracted on-chip interconnect netlist, package, and printed circuit board (PCB). In order to accurately estimate the EMI, a full-wave 3D simulation is performed including the measurement environment. The simulation results are compared with near-field electromagnetic scan results and far-field measurements from an anechoic chamber, and the sources of emission peaks were analyzed. For accurate far-field EMI simulation, PCB power trace models considering IC switching current paths and external power cable models must be considered for accurate EMI prediction. With the proposed EMI simulation model and flow, the electromagnetic compatibility can be tested even before the IC is fabricated.