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전기화학적 에칭에 의한 AFM용 텅스텐 탐침의 강성 제어
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  • 전기화학적 에칭에 의한 AFM용 텅스텐 탐침의 강성 제어
저자명
한규범,이승제,안효석,Han. Guebum,Lee. Seungje,Ahn. Hyo-Sok
간행물명
윤활학회지
권/호정보
2014년|30권 4호|pp.218-223 (6 pages)
발행정보
한국윤활학회
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정기간행물|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

This paper presents a method of controlling the stiffness of a tungsten probe for an atomic force microscope (AFM) in order to provide high-quality phase contrast images in accordance with sample characteristics. While inducing sufficient deformation on sample surfaces with commercial Si or $Si_3N_4$ probes is difficult because of their low stiffness, a tungsten probe fabricated by electrochemical etching with appropriately high stiffness can generate relatively large elastic deformation without damaging sample surfaces. The fabrication of the tungsten probe involves two separate procedures. The first procedure involves immersing a tungsten wire with both ends bent parallel to the surface of an electrolyte and controlling the stiffness of the tungsten cantilever by decreasing its diameter using electrochemical etching in the direction of the central axis. The second procedure involves immersing the end of the etched tungsten cantilever in the direction perpendicular to the surface of the electrolyte and fabricating a tungsten tip with a tip radius of 20-50 nm via the necking phenomenon. The latter etching process applies pulse waves every 0.25 seconds to the manufactured tip to improve its yield. Finite element analysis (FEA) of the stiffness of the tungsten probe as a function of its diameter showed that the stiffness of the tungsten probes greatly varies from 56 N/m to 3501 N/m according to the cantilever diameters from $30{mu}m$ to $100{mu}m$, respectively. Thus, the proposed etching method is effective for producing a tungsten probe having specific stiffness for optimal use with an AFM and certain samples.