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Design Challenges and Solutions for Ultra-High-Density Monolithic 3D ICs
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  • Design Challenges and Solutions for Ultra-High-Density Monolithic 3D ICs
  • Design Challenges and Solutions for Ultra-High-Density Monolithic 3D ICs
저자명
Panth. Shreepad,Samal. Sandeep,Yu. Yun Seop,Lim. Sung Kyu
간행물명
Journal of information and communication convergence engineering
권/호정보
2014년|12권 3호|pp.186-192 (7 pages)
발행정보
한국정보통신학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
서지반출

기타언어초록

Monolithic three-dimensional integrated chips (3D ICs) are an emerging technology that offers an integration density that is some orders of magnitude higher than the conventional through-silicon-via (TSV)-based 3D ICs. This is due to a sequential integration process that enables extremely small monolithic inter-tier vias (MIVs). For a monolithic 3D memory, we first explore the static random-access memory (SRAM) design. Next, for digital logic, we explore several design styles. The first is transistor-level, which is a design style unique to monolithic 3D ICs that are enabled by the ultra-high-density of MIVs. We also explore gate-level and block-level design styles, which are available for TSV-based 3D ICs. For each of these design styles, we present techniques to obtain the graphic database system (GDS) layouts, and perform a signoff-quality performance and power analysis. We also discuss various challenges facing monolithic 3D ICs, such as achieving 50% footprint reduction over two-dimensional (2D) ICs, routing congestion, power delivery network design, and thermal issues. Finally, we present design techniques to overcome these challenges.