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저온에서 La2/3+xTiO3-δ (x = 0, 0.13)세라믹스의 전자전도특성
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  • 저온에서 La2/3+xTiO3-δ (x = 0, 0.13)세라믹스의 전자전도특성
저자명
정우환,Jung. Woo-Hwan
간행물명
한국재료학회지
권/호정보
2014년|24권 11호|pp.604-609 (6 pages)
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한국재료학회
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정기간행물|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

The thermoelectric power and dc conductivity of $La_{2/3+x}TiO_{3-{delta}}$ (x = 0, 0.13) were investigated. The thermoelectric power was negative between 80K and 300K. The measured thermoelectric power of x = 0.13 increased linearly with increased temperatures and was represented by $S_0+BT$. The x = 0 sample exhibited insulating behavior, while the x = 0.13 sample showed metallic behavior. The electric resistivity of x = 0.13 had a linear temperature dependence at high temperatures and a T3/2 dependence below about 100K. On the other hand, the electric resistivity of x = 0 has a linear relation between $ln{ ho}/T$ and 1/T in the range of 200 to 300K, and the activation energy for small polaron hopping was 0.23 eV. The temperature dependence of thermoelectric power and the resistivity of x = 0 suggests that the charge carriers responsible for conduction are strongly localized. This temperature dependence indicates that the charge carrier (x = 0) is an adiabatic small polaron. These experimental results are interpreted in terms of spin (x = 0.13) and small polaron (x = 0) hopping of almost localized Ti 3d electrons.