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An international Comparison Measurement of Silicon Wafer Sheet Resistance using the Four-point Probe Method
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  • An international Comparison Measurement of Silicon Wafer Sheet Resistance using the Four-point Probe Method
  • An international Comparison Measurement of Silicon Wafer Sheet Resistance using the Four-point Probe Method
저자명
Kang. Jeon-Hong,Ying. Gao,Cheng. Yuh-Chuan,Kim. Chang-Soo,Lee. Sang-Hwa,Yu. Kwang-Min
간행물명
Journal of electrical engineering & technology
권/호정보
2015년|10권 1호|pp.325-330 (6 pages)
발행정보
대한전기학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

With approval from the Asia Pacific Metrology Program Working Group on Materials Metrology (APMP WGMM), an international comparison for sheet resistance standards for silicon wafers was firstly conducted among Korea Research Institute of Standards and Science (KRISS) in Korea, CMS/ITRI in Taiwan, and NIM in China, which are national metrology institutes (NMIs), from August 2011 to January 2012. The sheet resistance values of the standards are $10{Omega}$, $100{Omega}$, and $1000{Omega}$; the measurement was conducted in sequence at KRISS, CMS/ITRI, NIM, and KRISS again using the four-point probe method with single and dual configuration techniques. The reference value for the measurement results of the three NMIs was obtained through averaging the values of the three results for each sheet resistance range. The differences between the reference value and the measured values is within 0.22% for $10{Omega}$, 0.17% for $100{Omega}$, and 0.12% for $1000{Omega}$. Therefore, the international consistency for conducting sheet resistance measurements is confirmed within 0.22% through the APMP WGMM approved comparison.