For the fabrication of the microscale memory or electrical devices, Langmuir-Blodgett(LB) method is the most possible candidate. N-Alkylquinolium-TCNQ compounds were synthesized. The structure of the compounds were identified by the NMR spectroscopy and the purity were checked to be good by the elemental analysis. The surface pressure($pi$) was measured at the air-water interface. The isotherm showed two transitions at 30mN/m and 45mN/m. The LB films were deposited by the home-made Kuhn type apparatus. The transfer ratio($ au$) of the deposition was more than 0.95 for the up-stroke and less than 0.4 for the down-stroke. The absorbance peaks of the LB films appear at around 420nm and 700-820nm.