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서지반출
반도체 공정에서 배출되는 폭발성가스 처리효율 향상을 위한 플라즈마 토치 형상 개선
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  • 반도체 공정에서 배출되는 폭발성가스 처리효율 향상을 위한 플라즈마 토치 형상 개선
  • Improvement of Plasma Torch Shape for Upgrading Efficiency of Explosion Gases Elimination in Semiconductor Process
저자명
최희영,홍범의,정철진,최창식
간행물명
환경에너지공학KCI후보
권/호정보
2016년|13권 1호(통권24호)|pp.1-7 (7 pages)
발행정보
한국환경에너지공학회|한국
파일정보
정기간행물|KOR|
PDF텍스트(0.26MB)
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국문초록

영문초록

H2, NH3, GeH4, DCS(Dichlorosilane) gases were caused an explosion and an environmental pollution in semiconductor chemical process when it was exhausted in air. It needs eliminate gases safely. So, An explosive and environmental pollution gases, exhausted in semiconductor chemical process, were removed by utilizing a plasma process. In this study, Hydrogen gas was used as an ignition gas of combustion for elimination an explosive and environmental pollution gases(H2, NH3, GeH4, DCS) in a semiconductor chemical process. It induced to safety combustion of hydrogen by supplying air sufficiently. Also, Plasma process wasutilized for gas combustion and high heat source(1,100 ℃) was produced by combustion of hydrogen. Hydrogen gas was utilized to combust NH3, GeH4, DCS gases safely and it was improved efficiency of elimination. It confirmed basic experimental conditions to experiment on single gas and mixed gases for elimination of H2, NH3, GeH4, DCS. An efficiency of single gas was H2 96%, NH3 97%, GeH4 99%, DCS 97%. Plasma torch shape was modified cylindrical to trapezium, It was improved an elimination efficiency of NH3 gas about 10% after modified torch shape. H2, NH3, GeH4, DCS gases combusted (>96%) safely by modified plasma torch shape in a system. Therefore, It was expected an energy saving and application of elimination gas system.

목차

Ⅰ. 서론
II. 재료 및 방법
III. 결과 및 고찰
IV. 결론
참고문헌