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본문검색 결과만 보기
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Phenomenological monte carlo simulation model for predicting B, $BF_2$, As, P and Si implant profiles in silicon-based semiconductor device
Kwon. Oh-Kuen, Son. Myung-Sik, Hwang. Ho-Jung 한국진공학회 The Journal of Korean vacuum science & technology 9 Pages
한국진공학회 The Journal of Korean vacuum science & technology 1999, Vol.3 No.1 1-9 (9 pages)
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Low Specific On-resistance SOI LDMOS Device with P+P-top Layer in the Drift Region
Yao. Jia-Fei, Guo. Yu-Feng, Xu. Guang-Ming, Hua. Ting-Ting, Lin. Hong, Xiao. Jian 대한전자공학회 Journal of semiconductor technology and science 9 Pages
대한전자공학회 Journal of semiconductor technology and science 2014, Vol.14 No.5 673-681 (9 pages)
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Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs
Kim. Do-Kywn, Sindhuri. V., Kim. Dong-Seok, Jo. Young-Woo, Kang. Hee-Sung, Jang. Young-In, Kang. In Man, Bae. Youngho, Hahm. Sung-Ho, Lee 대한전자공학회 Journal of semiconductor technology and science 8 Pages
대한전자공학회 Journal of semiconductor technology and science 2014, Vol.14 No.5 601-608 (8 pages)
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Analysis of Random Variations and Variation-Robust Advanced Device Structures
Nam. Hyohyun, Lee. Gyo Sub, Lee. Hyunjae, Park. In Jun, Shin. Changhwan 대한전자공학회 Journal of semiconductor technology and science 15 Pages
대한전자공학회 Journal of semiconductor technology and science 2014, Vol.14 No.1 8-22 (15 pages)
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Development of sacrificial layer wet etch process of TiNi for nano-electro-mechanical device application
Park. Byung Kyu, Choi. Woo Young, Cho. Eou Sik, Cho. Il Hwan 대한전자공학회 Journal of semiconductor technology and science 5 Pages
대한전자공학회 Journal of semiconductor technology and science 2013, Vol.13 No.4 410-414 (5 pages)