Conventionally, a TIVT has been used for high power amplification in the microwave frequency range. However, an ultra-high-power amplifier in the 2GHz range has successfully been designed and fabricated employing high power transistors developed recently and available commercially. In the design of the amplifier, a balanced-pair configuration is adopted in order to obtain very high microwave power, and a good impedance matching is achieved by making use of microstripline techniques. For the RF power divider as well as combiner, an approach of stripline directional coupler isadopted because of its easiness in fabrication. The coupler so designed and fabricated indicates a satisfactory performance as a quadrature hybrie coupler. Measurements on the amplifier developed for an immediate commercial application also exhibit excellent overall performance characteristics RF power output, 14 watts, gain 14dB, frequency bandwidth, 160MHz, effciency 40%.