There has been many controversies about the effects of additive in sintering of SiC But no prior systematic work has been reported about the difference between the effects of B and $B_4C$ as additive. The sintering behavior of SiC and its strength are studied and the optimum concentrations of additives and sintering conditions for SiC are determined. The effects of B and $B_4C$ have same effects on reactive sintering of SiC except the easiness of transport via vapor phase for uniform distribution in case of B. The strength of sintered SiC without exaggerated grain growth is limited by surface flaws and is nearly independent of temperature up to 140$0^{circ}C$.