EAROM device is an n-channel MOS transistor with a control gate stack ed on the floating gate. On account of channel injection type, channel lengths are designed 4-8 $mu$m and chinnel widths 5-14 $mu$m. These devices which have fourstructures of different type control gate are designed by NMOS 5 $mu$m design rule and fabricated by double polysilicon gate NMOS Process. Double ion implantation is applied to increase punchthrough voltage and gate-controlled channel breakdown voltage. The drain and gate voltage for programming was 13-17V and 20-25V, respectively. EPROM cell fabricated could be erased not by optical method but by electrical method. The result of charge retention test showed decrease in stored charges by 4% after 200 hours at 1$25^{circ}C$.