기관회원 [로그인]
소속기관에서 받은 아이디, 비밀번호를 입력해 주세요.
개인회원 [로그인]

비회원 구매시 입력하신 핸드폰번호를 입력해 주세요.
본인 인증 후 구매내역을 확인하실 수 있습니다.

회원가입
서지반출
Crystalline Qualities and Surface Morphologies of As-Grown $YBa_2Cu_3O_{7-x}$ Thin Films on MgO(100) Substrate by Reactive Coevaporation Method
[STEP1]서지반출 형식 선택
파일형식
@
서지도구
SNS
기타
[STEP2]서지반출 정보 선택
  • 제목
  • URL
돌아가기
확인
취소
  • Crystalline Qualities and Surface Morphologies of As-Grown $YBa_2Cu_3O_{7-x}$ Thin Films on MgO(100) Substrate by Reactive Coevaporation Method
  • Crystalline Qualities and Surface Morphologies of As-Grown $YBa_2Cu_3O_{7-x}$ Thin Films on MgO(100) Substrate by Reactive Coevaporation Method
저자명
장호연,도부안광,토신전농,청수현사,추빈량삼,강본당일,송진태,Jang. Ho-Yeon,Watanabe. Yasuhiro,Doshida. Yutaka,Shimizu. Kenji,Okamoto. Yoichi,Akibama. Ryozo,
간행물명
한국재료학회지
권/호정보
1991년|1권 2호|pp.93-98 (6 pages)
발행정보
한국재료학회
파일정보
정기간행물|ENG|
PDF텍스트
주제분야
기타
이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
서지반출

기타언어초록

The as-grown $YBa_2Cu_3O_{7-x}$ superconducting thin films on MgO(100) substrate have been prepared by a reactive coevaporation method. The superconducting transition temperature, surface morphology and crystalline quality were examined as a function of the substrate temperature ranging from $450^{circ}C$ to $590^{circ}C$. From the reflection high energy electron diffraction (RHEED) analysis, it was found the film consisted of almost amorphous phase with a halo pattern deposited at the substrate temperature of $450^{circ}C$. The film deposited at the substrate temperature of $510^{circ}C$ consisted of polycrystalline phase, showing a broad ring pattern. On the other hand, for the film deposited at $590^{circ}C$, RHEED showed spotty pattern indicating that this film consisted of single crystal phase. It has rough film surface due to the surface outgrowth. The surface outgrowth increased as the substrate temperature increased from $510^{circ}C$ to $590^{circ}C$. the surface outgrowth may be due to the anisotropic growth rate. The highest transition temperature obtained in this study was $Tc_{zero}$ of 83K with $Tc_{onset}$ of 88K for the film deposited at $590^{circ}C$ using activated RF oxygen plasma.