Ta-silicide의 게이트 전극 및 비트라인(bit line)으로의 사용가능성을 알아보기 위하여 As, P, $BF_2$가 $5{ imes}10^15cm^-2$의 농도로 이온주입된 다결정 실리콘에 탄탈륨을 스퍼터링으로 증착한 후 급속 열처리로 Ta-silicide를 형성하였다. 형성된 Ta-silicide의 특성은 4-탐침법, X-rayghlwjf, SEM 단면사진과 ${alpha}$-step으로 조사하였으며, 불순물들의 거동은 Secondary Ion Mass Spectroscopy(SIMS)로 알아보았다. $TaSi_2$의 형성은 $800^{circ}C$에서 시작하며 $1000^{circ}C$ 이상에서 완료됨을 알았다. 형성된 $TaSi_2$층으로 out-diffusion 하였다.
Trantalum thin films have been prepared by DC sputtering onto As, P, and $BF_2$-implanted ($5{ imes}10^15cm^-2$) poly-silicon. The heat treatments by rapid thermal annealing(RTA) have been applied to these samples for the formation of silicides. We have studied the application possibility of Ta-silicide as gate electrode and bit line. The silicide formation and the dopant diffusion after the heat treatment were investigated by various methods, such as four-point probe, X-ray, SEM cross sectional views, ${alpha}$-step, and SIMS, The tantalum disilicide($TaSi_2$) are formed in the temperature above $800^{circ}C$, and grown in colummar structure. $TaSi_2$ has a good surface roughness, having range from $80{AA};to;120{AA}$, and implanted dopants are incoporated into the $TaSi_2$ layer during the RTA temperature.
