$eta$-SiC was chemically vapor deposited by pyrolysis of MTS＋H2 gas mixture. The experiments were conducted in the temperature range of 1100~150$0^{circ}C$ with a r.f. induction furnace under atmospheric pressure. The IR, XRD, EDS and AES analysis revealed that the free Si was always codeposited with SiC below 140$0^{circ}C$, regardless of the total flow rate and MTS concentration, whereas $eta$-SiC single phase was deposited at 150$0^{circ}C$. C3H8 or CH2Cl2 as an excess C sources, was supplied with MTS in order to obtain stoichiometric SiC at low temperature. With the addition of C3H8 or CH2Cl2, the deposition rate was increased and $eta$-SiC single phase could be deposited even at temperature as low as 110$0^{circ}C$. In the absence of C3H8 or CH2Cl2, the microhardness of the layer was quite low (<HV2000) becuase of codeposited free Si, with propane addition, however, it reached up to inherent SiC value ( HV3000).