In the WSi2/CVD-Si/SiO2 polycide structure, electrode resistance and its property were studied as a function of deposition temperature and thickness of CVD-Si, diffusion condition of POCl3, and WSi2 being deposited or not. Resistivity of poly-Si is decreased with increment of thickness in the case of POCl3 diffusion of low sheet resistance, but it is increased in the case of high sheet resistance. The resistivity of amorphous-Si is generally lower than that of poly-Si. Initial sheet resistance of poly-Si/WSi2 gate electrode is affected by the thickness and resistance of poly-Si layer, but final resistance after anneal, 900$^{circ}C$/30min/N2, is only determined by WSi2 layer. Flourine diffuses into SiO2, but tungsten does not. In spite of out-diffusion of phosphorus into WSi2 layer, the sheet resistance is not changed.