In this paper semi empirical models are presented for the hot electron induced threshold voltage shift(${Delta}V_{t}$) and effective channel shortening length (${Delta}L_{H}$) in degraded PMOSFET. Trapped electron charges in gate oxide are calculated from the well known gate current model and ΔLS1HT is calculated by using trapped electron charges. (${Delta}L_{H}$) is a function of gate stress voltage such as threshold voltage shift and degradation of drain current. From the correlation between (${Delta}L_{H}$) has a logarithmic function of stress time. From the measured results, (${Delta}V_{t}$) and (${Delta}L_{H}$) are function of initial gate current and device channel length.