A numerical model for fabrication and deposition of ultrafine SiO2 particles were proposed in the simplified horizontal MCVD apparatus using tube furnace reactor. The model equations such as energy and mass balance equations and the 0th, 1st and 2nd moment balance equations of aerosols were considered in the reactor. The phenomena of SiCl4 chemical reaction, SiO2 particle formation and coagulation, diffusion and thermophoresis of SiO2 particles were included in the aerosol dynamic equation. The profiles of gas temperature, SiCl4 concentration and SiO2 particle volume were calculated for standard conditions. The concentrations, sizes and deposition efficiencies of SiO2 particles were calculated, changing the process conditions such as tube furnace setting temperature, total gas flow rate and inlet SiCl4 concentration.