The electrical resistivity, deposition rate and surface morphology of Al films deposited by MOCVD have been studied on the Si, $SiO_2$, and TiN(500$AA$)/So sibstrates. Al films were deposited with the pyrolysis of dimethylethylamine alane(DMEAA). The growth rate of DMEAA was controlled in various ranges. The deposition activation energy($E_a$) fo DMEAA wasl 0.14 eV on TiN and 0.32 eV on $SiO_2$. The texture of Al films changed form"(200) to (111) as the deposition rate decreased. The contact hole of Al film deposited on $0.45{ imes}0.45${mu}m^2$ contact with the aspect ratio of 1.2 was fully filled. The Al film deposited by DMEAA ahd about 0.3 at.% carbon concentration by AES analysis. The resistivity of Al films was strongly ingluenced by surface morphology. The resistivity of Al films was 3-7${mu}{Omega}cm$/TEX>