Gas flow and heat and species transport in the vcrtical reactor for metal organic chemical vapor deposition(MOCVD) of Cu thin film are analyzed by numerical simulation of a mathematical model for the process. Equations of this modeln were solved using Galerkin finite element method, Newton-Raphson iteration and frontal algorithm for the flow structure, temperature distribution and concentration distribution of reacting species. Deposition rates of Cu thin using Cu(hfac) VTMS as a precursor were estimated from these results. For standard process conditions, reactor pressure was set at at ltorr while substrated temperature and inlet gas temperature was $200^{circ}C$ and $70^{circ}C$respectively and inlet flow rate was set at 50sccm. Under standard conditions, depostion rates fo Cu were in the range of 160-220${AA}/min.$ Effects of the operating conditions, reactor geometry, and mass transfer characterisitcs on the deposition rate and its uniformity were examined. Also, the numerical computations demonstrated that film thickness uniformity can be increased by using the two-zone shower head.