Common methods for ohmic contact to p-CdTe are to form a p$^{+}$ region under the contact by in-diffusion of contact material to reduce the barrier height and to modify a p-CdTe surface layer using chemical treatment. In this study, the surface chemical treatment of p-CdTe was carried out by $H_3$P$O_4$+HN$O_3$ or $K_2$C${r_2}{O_7}$+$H_2$S$O_4$ solution to provide a Te-rich surface. And various thin film contact materials such as Cu, Au, Ni, and Cu/Au were deposited by E-beam evaporation to form ohmic contact to p-CdTe. After the metallization, post annealing was performed by oven heat treatment at 15$0^{circ}C$ or by RTA(Rapid Thermal Annealing) at 250-35$0^{circ}C$. Surface chemical treatments of p-CdTe thin film improved metal/p-CdTe interface properties and post heat treatment resulted in low contact resistivity to p-CdTeTe