The crystallite size of the chemical-vapor-deposited Cu film is usually so large that the Cu film does not fill contact holes or via holes in ultra-large-scaled integrated cirucits well. Therefore, is is very important to make the grain size of the Cu film small enough to fill small contact holes with high aspect ratio. Preteratment of the substrate surface with Ar plasma has been found to be effctive in making the grain size of the Cu film smaller and in enhancing the deposition rate of the Cu film. A Cu film deposited on borophosphosilicate glass(BPSG) has the characterisics of a smaller grain size, a lower resistivity, and a higher degree of (III) preferred orientation, but the lower deposition rate is slightly lower than that for Si$O_2$ glass. The higher resistivity of the Cu film on Si$O_2$ may be due to the formation of the intermetallic compound $Cu_15$S$i_4$ about 40$0^{circ}C$ which is not formed at the Cu-BPSG interface at the same temperature. Also, the dependence of some properties of the Cu film on the substrate materials is discussed.