A thin film of Aluminum for ultra large scale integrated circuits(ULSI) metallization has been formed by PECVD using DMEAA(Dimethylethylamine alane) as a precursor. It was found that the Al film could be deposited on Si$O_2$ substrate when the hydrogen plasma was utilized for pyrolysis of DMEAA. Comparing to thermal CVD, reflectivity as well as the resistance was much better in PECVD Al film on Si$O_2$. Conformal step coverage turned out to be excellent when the PECVD Al film was deposited on the submicron contact holes.