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PREPARATION OF SILICON OXIDE FILMS WITH HIGH WATER REPELLENCY BY RF PLASMA-ENHANCED CVD
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  • PREPARATION OF SILICON OXIDE FILMS WITH HIGH WATER REPELLENCY BY RF PLASMA-ENHANCED CVD
  • PREPARATION OF SILICON OXIDE FILMS WITH HIGH WATER REPELLENCY BY RF PLASMA-ENHANCED CVD
저자명
Hinzumi. Atsushi,Sekoguchi. Hiroki,Kakinoki. Nobuyuki,Takai. Osamu
간행물명
Fabrication and Characterization of Advanced Materials
권/호정보
1995년|2권 |pp.963-968 (6 pages)
발행정보
한국재료학회
파일정보
정기간행물|ENG|
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기타
이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

Silicon oxide films contained fluoro-alkyl functions(FAFs ; $CF_3$, $CF_2$ and CF functions) were prepared on the polycarbonate(PC), glass and Si substrates by rf plasma-enhanced CVD(PECVD). The fluoro-alkyl silanes(FASs ; $CF_3(CF_2)nCH_2CH_2Si(OCH_3)_3, ;n=0, 5, 7)$ were used as raw materials. The substrate temperature during deposition was around $50^{circ}C$. The obtained films had good water repellency. The maximum contact angle for a water drop was 107 degrees. The transmittance of the PC substrate was improved by the coating form 87% to 90%. These films also have a function as an antireflective coating.