PbTiO3 thin films were grown on Pt/Ti/SiO2/Si substrate by metalorganic chemical vapor deposition (MOCVD) using Pb(tmhd)2 and titanium ttra-isopropoxide(TTIP) as precusors. Temperature of TTIP bath and deposition temperature were varied in the range 30-4$0^{circ}C$and 430-63$0^{circ}C$ respectively. As the TTIP bath temperature was increased from 3$0^{circ}C$ to 4$0^{circ}C$ with deposition temperature of 53$0^{circ}C$ the films tend to have TiO2-x and PbTiO3 phases with rough surface. The PbTiO3 thin film was amorphous at low deposition temperature (43$0^{circ}C$) while the polycrystalline thin films were obtained at higher temperature(500-63$0^{circ}C$) from the results of XRD, SEM. AFM. Values of dielectric constant and the dielectric loss were 70-450 and 0.01-0.3 in the range from 0.3 kHz to 1000 kHz repectively. Composition of the as-deposited films at 43$0^{circ}C$ was close to stoichiomet-ric value by AES analysis. AES depth profile indicated no severe interfacial reaction between the film and bottom electrode without showng out-diffusion of Tilayer