The H2S sensing mechanism of CuO-SnO2 was confirmed by analyzing the electrical-resistance variation with temperature under an H2S atmosphere. While the resistance of CuO-SnO2 thick film at N2+H2S atmosphere was almost invariant with change in temperature it increased with increasing temperature for air +H2S atmos-phere. This behavior was analyzed using an equation derived from a basic assumption based on the H2S sensing mechanism proposed before. the experimental results are sufficiently explained with the equation derived which showed that the H2S sensing mechanism was reasonable. The equation also gave a detailed analysis and physical meaning to the behavior of the resistance variation with change in H2S concentration.