Laser scribing of silicon plays an important role in metallization including the grid pattern and the front surface geometry which means aspect ratio of metal contacts. To make a front metal electrode of buried contact solar cell, we used ND:YAG lasers that deliver average 3-4W at TEM$\_$00/ mode power to sample stage. The Q-switched Nd:YAG laser of 1.064 gm wavelength was used for silicon scribing with 20-40.mu.m width and 20-200.mu.m depth capabilities. After silicon slag etching, the groove width and depth for buried contact solar cell are -20.mu.m and 30-50.mu.m respectively. Using MEL 40 Nd:YAG laser system, we can scribe the silicon surface with 18-23.mu.m width and 20-200.mu.m depth controlled by krypton arc lamp power, scan speed, pulse frequency and beam focusing. We fabricated a buried contact Silicon Solar Cell which had an energy conversion efficiency of 18.8 %. In this case, the groove width and depth are 20.mu.m and 50.mu.m respectively.