- (Al, Ga)As 와 (Cd, Mn)Te의 복합화합물 반도체표면에서의 자연 산화물의 형성
- ㆍ 저자명
- 최성수
- ㆍ 간행물명
- 韓國眞空學會誌
- ㆍ 권/호정보
- 1996년|5권 1호|pp.6-13 (8 pages)
- ㆍ 발행정보
- 한국진공학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
The kinetics of native oxide formation on the (Al, Ga)As and (Cd, Mn)Te have been studied by X-ray photoelectron spectroscopy(XPS) and Auger electron spectroscopy(AES). The regrowth of native oxide after 3keV Ar ion sputter etch and deionized water etch has been studied. The previous report exhibited that the native oxide on CdTe and GaAs can be removed completely by deionzied(DI) water only[1]. On the other hand, the airgrown native oxide on (Al, Ga)As become nonhomogeneous and the regrown native oxide on (Cd,Mn)Te can be partially removed.