In this paper, we report the result of the three-dimensional topography simultor, 3D-SURFILER(SURface proFILER) for the simulation of topographical evalution of the surface, curing a plasma etching process. We employed cell-removal algorithm to represent the topographical evoluation of the surface. The visibility with shadow effect was developed and applied to the spillover algorithm. To demonstrate the capability of 3D-SURFILER, we compared with simulated profiles with the SEM picture for dry and reactive ion etching(RIE) of the Si$_{3}$N$_{4}$ film and Pt film.