Microwave dielectric properties of $BiNbO_4$ containing CuO and $V_2O_5$(BN ceramics). BN ceramic with 0.07wt% $V_2O_5$ and 0.03wt% CuO (BNC3V7) was sintered at $900^{circ}C$ where it is possible for these to be co-fired with Ag electrode. The dielectric constant of 44.3, TCF (Temperature Coefficient of resonance Frequency) of 2 ppm/$^{circ}$ and Q${ imes}f_o$ value (product of Quality value and resonance Frequency) of 22,000GHz could be obtained from those ceramics. It is observed that orthorhombic structure was stable $1000^{circ}C$. As sintering temperature increases, the dielectric properties decreased. The main reasons were abnormal grain growth and the main peak of triclinic moved from the main peak of orthorhombic.