Ferroelectric $Sr_xBi_yTa_2O_{9+alpha}$/(0.7$leqSrleq1.0,; 2.0leqBileq2.6)$ solutions were prepared by MOD (Metalorganic Deposition) process. These solutions were made into thin films with thickness ranging from 1500~2000${AA}$ by spin coating. The phase transformation of the SBT thin films by variation of annealing temperature and annealing time were observed using high temperature XRD and SEM. The crystallization and grain growth of SBT thin film were accomplished at $800^{circ}C$ for 30 minutes after deposition of Pt top electrode by sputtering to prevent electrical breakdown. Ferroelectric properties of the SBT thin films were measured in the range of $pm$3V; and; pm5V$. The specimen with composition ratio of Sr/Bi/Ta (0.8/2.4/2.0) has the excellent ferroelectric properties ; $2P_r = 10.5,; 13.2muC/cm^2 ;at; pm3V; and; pm5V$ respectively. Observing the post annealed Pt/SBT/Pt interface by SEM, it was found that Pt electrode sputtered on to the SBT thin film penetrated into the hollow on the SBT thin film, thus decreasing the effective insulation thickness. The effective insulation thickness recovered by post annealing, and this was confirmed by leakage current density measurement.