- Sol-Gel 법으로 제작된 PLZT 박막의 Zr/Ti 비에 따른 구조 특성에 관한 연구
- ㆍ 저자명
- 최형욱,장낙원,박창엽
- ㆍ 간행물명
- 전기전자재료학회논문지
- ㆍ 권/호정보
- 1998년|11권 7호|pp.535-540 (6 pages)
- ㆍ 발행정보
- 한국전기전자재료학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
Thin films of PLZT were prepared on indium tin oxide(ITO) coated glass substrates by sol-gel process and annealed by rapid thermal annealing(RTA) at $750^{circ}C$ for 5 minutes. The crystal structure of PLZT thin films were investigated for a different Zr mol% content. XRD results showed that the crystallographic structure was transitted from tetragonal to rhombohedral structure as Zr mol% increased. Raman spectroscopy results showed that the bands of spectra became broader as the amount of Zr mol% increased and two crystal phase coexisted at 2/55/45 PLZT film. Raman spectroscopy was useful for crystal structure analysis of PLZT thin films.