Intrinsic gettering is usually to improve wafer quality, which is an important factor for reliable ULSI devices. In order to generate oxygen precipitation in lightly and heavily boron doped silicon wafers with or without high $^75 As^+$ ion implantation, the 2-step annealing method was adopted. After annealing, the were cleaved and etched with th Wright etchant. The morphology of cross section on samples was inspected by FESEM(field emission scanning electron microscopy). The morphology of unimplanted samples was rater rough than that of the implanted. Oxygen precipitation density observed by an optical microscope in lightly boron doped samples was about 3$ imes10^6/cm^3$. However, in heavily boron doped samples, the density of oxygen precipitation was largest at $600^{circ}C$ in 1st annealing, and decreased abruptly until $800^{circ}C$, But it increased slightly at $1000^{circ}C$ and was independent with the implantation.